Measurement of excess carrier lifetime in semiconductor devices

Details Measurement of excess carrier lifetime in semiconductor devices Measurement of excess carrier lifetime in semiconductor devices

1976-03-10

1978-05-16

Rolinec, Rudolph V.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158T, G01R 3126

Patent

active

040901327

ABSTRACT:
A system is provided for measuring excess carrier lifetime in semiconductor devices. A series of rectangular current pulses is applied to the device to be tested, and the slope of the open-circuit voltage decay curve following termination of each pulse is observed. The slope of the curve is determined at a predetermined voltage level by means of voltage comparators which produce an output pulse having a width indicating the time interval required for the open-circuit voltage to decay from a preset level to a lower preset level. The excess carrier lifetime is determined from the slope of the voltage decay curve, and is visually displayed in microseconds in a digital display. Provision is also made for observing the voltage decay curve on an oscilloscope.

REFERENCES:
patent: 3359491 (1967-12-01), McCutcheon
patent: 3418573 (1968-12-01), Alford et al.
Lederhandler et al.; 1955; Proc. Instn. Rad. Engrs., N.Y.; 43; 477.
Howard, N.R.; 1962; J. Sci. Instrum.; 39; 647.

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