Measurement of electrical characteristics of semiconductor wafer

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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324 731, 324662, 324765, G01R 3126, G01N 2700

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active

06037781&

ABSTRACT:
C-V measurement is first carried out with respect to a target area on a semiconductor wafer using a measuring electrode located over the target area. Parameters used for C-t measurement of the target area (for example, applied voltages Vacc and Vmeas or a recovery time Tr) are then obtained from a C-V characteristic obtained by the C-V measurement. C-t measurement is subsequently carried out with respect to the target area using these parameters.

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