Optics: measuring and testing – Dimension
Reexamination Certificate
2005-10-18
2005-10-18
Pham, Hoa Q. (Department: 2877)
Optics: measuring and testing
Dimension
C356S635000, C355S077000, C355S053000, C430S005000
Reexamination Certificate
active
06956659
ABSTRACT:
A test mark, as well as methods for forming and using the test mark to facilitate the measurement of the critical dimensions of etched features in semiconductor and other wafer level processing is described. The test marks may be used to characterize, calibrate and/or monitor etch performance. Test marks are defined by imaging (typically at partial exposures) overlapping, angularly offset lines in a resist that covers a layer to be etched. The lines preferably have line widths that are equal (or related) to a critical dimension of interest. After the resist is developed and otherwise processed, the layer is etched as appropriate, thereby creating the test marks. The test marks are then imaged to facilitate the determination of a geometric parameter of each mark. Most commonly, the geometric parameter determined relates to the area of the mark and/or the length of its major dimension. These parameters can then be used to approximate a critical dimension of interest based at least in part on the determined geometric parameter of the test mark.
REFERENCES:
patent: 4396849 (1983-08-01), Taiani
patent: 4433911 (1984-02-01), Sawada et al.
patent: 4521686 (1985-06-01), Coates et al.
patent: 4549084 (1985-10-01), Markle
patent: 4585342 (1986-04-01), Lin et al.
patent: 4677301 (1987-06-01), Tanimoto et al.
patent: 4744662 (1988-05-01), Suto et al.
patent: 4759626 (1988-07-01), Kroko
patent: 4772119 (1988-09-01), Bouwhuis et al.
patent: 4774158 (1988-09-01), Vervoordeldonk et al.
patent: 4803524 (1989-02-01), Ohno et al.
patent: 4908656 (1990-03-01), Suwa et al.
patent: 4959326 (1990-09-01), Roman et al.
patent: 5044750 (1991-09-01), Shamble
patent: 5049925 (1991-09-01), Aiton et al.
patent: 5111240 (1992-05-01), Boettiger et al.
patent: 5140366 (1992-08-01), Shiozawa et al.
patent: 5247329 (1993-09-01), Oshida et al.
patent: 5262822 (1993-11-01), Kosugi et al.
patent: 5300786 (1994-04-01), Brunner et al.
patent: 5362585 (1994-11-01), Adams
patent: 5408083 (1995-04-01), Hirukawa et al.
patent: 5440138 (1995-08-01), Nishi
patent: 5450205 (1995-09-01), Sawin et al.
patent: 5508803 (1996-04-01), Hibbs et al.
patent: 5573634 (1996-11-01), Ham
patent: 5615006 (1997-03-01), Hirukawa et al.
patent: 5656403 (1997-08-01), Shieh
patent: 5666205 (1997-09-01), Tateno et al.
patent: 5686223 (1997-11-01), Cleeves
patent: 5702868 (1997-12-01), Kellam et al.
patent: 5747202 (1998-05-01), Tanaka
patent: 5776645 (1998-07-01), Barr et al.
patent: 5789734 (1998-08-01), Torigoe et al.
patent: 5808731 (1998-09-01), Kirk
patent: 5914784 (1999-06-01), Ausschnitt et al.
patent: 5953128 (1999-09-01), Ausschnitt et al.
patent: 5965309 (1999-10-01), Ausschnitt et al.
patent: 5968693 (1999-10-01), Adams
patent: 5973773 (1999-10-01), Kobayashi
patent: 5976740 (1999-11-01), Ausschnitt et al.
patent: 5981119 (1999-11-01), Adams
patent: 5985495 (1999-11-01), Okumura et al.
patent: 5985498 (1999-11-01), Levinson et al.
patent: 5989764 (1999-11-01), Adams
patent: 5991006 (1999-11-01), Tsudaka
patent: 6004706 (1999-12-01), Ausschnitt et al.
patent: 6057908 (2000-05-01), Ota
patent: 6063531 (2000-05-01), Singh et al.
patent: 6088113 (2000-07-01), Kim
patent: 6094256 (2000-07-01), Grodnensky et al.
patent: 6128089 (2000-10-01), Ausschnitt et al.
patent: 6130750 (2000-10-01), Ausschnitt et al.
patent: 6137578 (2000-10-01), Ausschnitt
patent: 6166801 (2000-12-01), Dishon et al.
patent: 6226074 (2001-05-01), Fujisawa et al.
patent: 6296977 (2001-10-01), Kaise et al.
patent: 6317211 (2001-11-01), Ausschnitt et al.
patent: 6323938 (2001-11-01), Grodnensky et al.
patent: 6323945 (2001-11-01), Saito
patent: 6338926 (2002-01-01), Ku et al.
patent: 502583 (1992-09-01), None
patent: 973068 (2000-01-01), None
patent: 992855 (2000-04-01), None
patent: 1065567 (2001-01-01), None
patent: 62-115830 (1987-05-01), None
patent: 62-247525 (1987-10-01), None
patent: 1-187817 (1989-07-01), None
patent: 2-30112 (1990-01-01), None
patent: 2-31142 (1990-02-01), None
patent: 4-209518 (1992-07-01), None
patent: 4-324615 (1992-11-01), None
patent: 5-62882 (1993-03-01), None
patent: 405129238 (1993-05-01), None
patent: 5-217872 (1993-08-01), None
patent: 1128217 (2001-08-01), None
patent: 1160626 (2001-12-01), None
patent: WO 92/11609 (1992-07-01), None
patent: WO 01/84382 (2001-11-01), None
U.S. Appl. No. 09/861,541, filed May 22, 2001 (w/filing receipt).
Arnold et al., “A focus vernier for optical lithography”, (1993) SPIE vol. 1926, pp. 380-392.
Brunner et al., “A Stepper Image Monitor for Precise Setup and Characterization”, (1988) SPIE vol. 922, Optical/Laser Microlithography, pp. 366-375.
Liu et al., “The Application of Alternating Phase-shifting Masks to 140 nm Gate Patterning (II): Mask Design and Manufacturing Tolerances”, (1998) SPIE vol. 3334, pp. 2-14.
Kirk, “Astigmatism and field curvature from pin-bars”, (1991) SPIE vol. 1463 Optical/Laser Microlithography IV, pp. 282-291.
Schneider et al., “Automated Photolithography Critical Dimension Controls In A Complex, Mixed Technology, Manufacturing Fab”, (2001) IEEE/SEMI Adv. Semi. Mfging. Conf., pp. 33-40.
Ronse et al., “CD Control Comparison of Step & Repeat versus Step & Scan DUV Lithography for sub-0.25 μm gate printing”, (1998) SPIE vol. 3334, pp. 58-66.
Wong et al., “Characterization of line width variation”, (2000) SPIE: vol. 4000, pp. 184-191.
Zavecz et al., “Critical Dimension Uniformity Prediction And A-Method Of Discrimination Between Exposure Tool And Process Induced Variation Using Empiriical Focal Plane Modeling”, (1997) TEA Sys. Corp., pp. 155-161.
Ferguson et al., “Data analysis methods for evaluating lithographic performance”, (1997) J. Vac. Sci. Tecnol. B 15(6), pp. 2387-2393.
Sohail et al., “Diffractive techniques for lithographic process monitoring and control”, (1994) J. Vac. Sci. Technol. B 12(6), pp. 3600-3006.
Starikov, “Exposure Monitor Structure”, (1990) SPIE vol. 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, pp. 315-324.
Rosner et al., “Fourier Analysis Determination of Best Focus in Sub-micron Lithography”, (1994) SPIE vol. 2196, pp. 314-320.
Brunner, “Impact of lens aberrations on optical lithography”, (1997) IBM J. Res. Develop., vol. 41 No. 1/2, pp. 57-67
Brunner et al., “In Situ Resolution and Overlay Measurement on a Stepper”, (1985) SPIE vol. 565 Micron and Submicron Integrated Circuit Metrology, pp. 6-13.
Singh et al., “Linewidth Measurement by Low Voltage SEM”, (1988) SPIE vol. 921, Integrated Circuit Metrology, Inspection, and Process Control II, pp. 16-21.
Milner et al., “Lithography process monitor using light diffracted from a latent image”, (1993) SPIE vol. 1926, pp. 94-105.
Kirk, “Measurement of astigmatism in microlithography lenses”, (1998) SPIE vol. 3334, pp. 848-854.
Kirk et al., “Measurement of microlithography aerial image quality”, (1996) SPIE vol. 2726, pp. 410-416.
Murray, “Measuring dimensions Using Murray Daggers”, (Dec. 1982) Semiconductor Int'l , pp. 70-73.
Kirk, “Measuring the aerial image with an atomic force microscope”, (1997) Microlithography World, pp. 4-9.
Brunner, “New Focus Metrology Technique Using Special Test Mask”, (1994) Microlithography World, pp. 5-13.
Finders et al., “Optimizing i-line lithography for 0.3μm poly-gate manufacturing”, (Mar. 1997)Solid State Technology, 11 pp.
Wheeler et al., “Phase Shift Focus Monitor Applications To Lithography Tool Control”, (1997) SPIE vol. 3051, pp. 225-233.
Ausschnitt et al., “Process window metrology”, (2000) SPIE vol. 3998, pp. 158-166.
Brunner et al., “Quantitative stepper metrology using the focus monitor test mask”, (1994) SPIE vol. 2197, pp. 541-549.
Ausschnitt, “Rapid Optimization of the Lithographic Process Window”, (1989) SPIE vol. 1088, Optical/Laser Microlithography II, pp
Beyer Weaver & Thomas LLP
Nikon Precision Inc.
Pham Hoa Q.
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