Measurement-based system for modeling and simulation of active s

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364489, 364490, G06G 762

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active

054672910

ABSTRACT:
A modeling system for active semiconductor devices, such as gallium arsenide field effect transistors, for nonlinear (e.g., harmonic balance) circuit simulation. The model enables fast and unambiguous construction (model generation) by explicit calculations applied to raw device response data obtained using an adaptive, automated data acquisition system employed to characterize the device. The automated data acquisition system obtains the data adaptively, taking more data where nonlinearities are most severe and within a calculated, safe operating range of the device. The system converts conventional d.c. and S-parameter data directly into a detailed, device-specific, large-signal model. The system is extremely fast and replaces the need for conventional parameter extraction based on circuit simulation and optimization techniques. The measurement-based model improves large-signal simulation accuracy over an extended operating frequency range, because the model nonlinearities are explicitly constructed from device response data. The model is non quasi-static in that it accounts for frequency dispersion effects. Scaling rules allow devices of various geometries to be simulated from measurements on a single device. Therefore, the model is general, being technology and process independent in that the same calculation procedure applies to any device for which the equivalent circuit is valid. The model implementation in the automated data acquisition system, model generator, and harmonic balance (nonlinear) circuit simulator provides an efficient, practical system for state-of-the-art nonlinear circuit design.

REFERENCES:
patent: 4933860 (1990-06-01), Liu
patent: 4939681 (1990-07-01), Yokomizo et al.
patent: 5025402 (1991-06-01), Winkelstein
patent: 5031111 (1991-07-01), Chao et al.
patent: 5046016 (1991-09-01), Krill et al.
patent: 5047971 (1991-09-01), Horwitz
patent: 5051911 (1991-09-01), Kimura et al.
patent: 5146460 (1992-09-01), Ackerman et al.
Lund et al., "Non-linear modelling of the NE67383 MESFET," China 1991 International Conference on Circuits and Systems, Jun. 1991, pp. 196-199, vol. 1.
Struble et al., "Modeling intermodulation distortion in GaAs MESFETs using pulsed I-V characteristics," 13th Annual GaAs IC Symposium Technical Digest 1991, Oct. 1991, pp. 179-182.
Chen et al., "Novel GaAs FET Modeling technique for MMICs," GaAs IC Symposium, Nov. 1988, pp. 49-52.
Vidalou et al., "Accurate nonlinear transistor modeling using pulsed S-parameters measurements under pulsed bias conditions," 1991 IEEE MTT-S International Microwave Symposium Digest, Jun. 1991, pp. 95-98, vol. 1.
Vandeloo et al., "Modeling of the MOS transistor for high-frequency analog design," IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Jul. 1989, pp. 713-723, vol. 8, Iss. 7.
Vendelin, G. D., "Evaluating nonlinear models for microwave GaAsFETs" IEEE Spectrum, Sep. 1990, pp. 48-50.

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