Measurement apparatus for FET characteristics

Details Measurement apparatus for FET characteristics Measurement apparatus for FET characteristics

2008-07-22

2008-07-22

Tang, Minh N (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S765010, C324S073100

Reexamination Certificate

active

11789833

ABSTRACT:
A measurement apparatus for FET characteristics comprises a divider connected to a pulse generator for dividing pulses from the pulse generator into first and second pulses; a first SMU; a first switch for selecting pulses from the divider or voltage from the first SMU; a terminal resistor for applying signals from the first switch and supplying the signals to the first terminal of the device under test; a second and a third SMU; a bias-T connected to the third SMU; a second switch for selecting to connect the second terminal of the device under test to the second SMU or to connect the second terminal to signals of the bias-T obtained by multiplexing the voltage from the third SMU; and voltage measurement unit connected to the divider and the bias-T.

REFERENCES:
patent: 5905384 (1999-05-01), Inoue et al.
patent: 6998869 (2006-02-01), Tanida et al.
patent: 2006/0145708 (2006-07-01), Saito
patent: 2006/0273807 (2006-12-01), Okawa
patent: 2007/0013407 (2007-01-01), Okawa
Jenkins, K.A. et al. “Measurement of I-V Curves of Silicon-on-Insulator (SOI) MOSFET's Without Self-Heating”. IEEE Electron Device Letters, vol. 16, No. 4, Apr. 1995.
International Conference on Microelectronic Test Structures Tutorial Short Course. Mar. 6, 2006.

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