Means for forming SOI

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S311000, C438S149000

Reexamination Certificate

active

07101772

ABSTRACT:
A method for forming a SOI structure in which porous silicon is sealed and an epitaxial layer is grown thereover, followed by implantation of oxygen and annealing.

REFERENCES:
patent: 4910165 (1990-03-01), Lee et al.
patent: 5023200 (1991-06-01), Blewer et al.
patent: 5950094 (1999-09-01), Lin et al.
patent: 6096582 (2000-08-01), Inoue et al.
patent: 6143629 (2000-11-01), Sato
patent: 6200878 (2001-03-01), Yamagata et al.
patent: 6246068 (2001-06-01), Sato et al.
patent: 6277703 (2001-08-01), Barlocchi et al.
patent: 6294478 (2001-09-01), Sakaguchi et al.
patent: 6326279 (2001-12-01), Kakizaki et al.
patent: 6335269 (2002-01-01), Sato
patent: 6566255 (2003-05-01), Ito
patent: 6593211 (2003-07-01), Sato
patent: 6613638 (2003-09-01), Ito
patent: 6762057 (2004-07-01), Gilton
patent: 6858508 (2005-02-01), Ito

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Means for forming SOI does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Means for forming SOI, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Means for forming SOI will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3570358

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.