Means for forming a melt of a semiconductor material in order to

Details Means for forming a melt of a semiconductor material in order to Means for forming a melt of a semiconductor material in order to

1986-12-23

1988-08-09

Doll, John

Chemical apparatus and process disinfecting, deodorizing, preser

Physical type apparatus

Crystallizer

422108, 422245, 422248, 118405, 156601, 156624, 156DIG64, 156DIG68, C30B 2106, C30B 3500

Patent

active

047626879

ABSTRACT:
The inventive means includes a supply vessel (10) having a bottom opening (14), feed means (15 to 17) for supplying the vessel (10) with solid silicon and means (11 to 13) for heating the vessel, said vessel being placed above the crucible (1) containing the melt (8) so that the molten silicon in the vessel (10) flows out through the bottom opening (14) into the crucible (1) when the level (h) of the molten silicon in the supply vessel reaches a maximum value (20) and the replenishing flow stops when the level (h) has fallen to a minimum value (22). An application involving the deposition of a layer of polycrystalline silicon onto a carbon tape is described.

REFERENCES:
patent: 3206286 (1965-09-01), Bennett et al.
patent: 4036595 (1977-07-01), Lorenzini et al.
patent: 4242307 (1980-12-01), Fally
patent: 4282184 (1981-08-01), Fregl et al.
patent: 4447289 (1984-05-01), Geissler et al.
patent: 4577588 (1986-03-01), Mautref et al.
patent: 4616595 (1956-10-01), Belouet
Belouet et al., Growth of Polysilicon Sheets on a Carbon Shaper by the Rad Process, Journal of Crystal Growth, 61, 1963, pp. 615-628.

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