Means for a self-aligned multilayer laser epitaxy structure devi

Details Means for a self-aligned multilayer laser epitaxy structure devi Means for a self-aligned multilayer laser epitaxy structure devi

1986-05-16

1987-05-12

Powell, William A.

Coherent light generators

Particular active media

Semiconductor

156655, 1566591, 156662, 427 87, 427 88, H01S 319, H01L 3300, H01L 2100

Patent

active

046655255

ABSTRACT:
A method of forming the proper metallization contacts in a multilayer epitaxy laser device is provided. By selecting the proper crystal plane orientation in etching nonplanar features like channels for the device, a differential etch rate in a free-etch can be effected to remove only selected portions of the top layer and to provide self-alignment in the metallization process.

REFERENCES:
patent: 4227975 (1980-10-01), Hartman et al.
patent: 4268537 (1981-05-01), Goodman
patent: 4509996 (1985-04-01), Greene et al.
patent: 4613387 (1986-09-01), Turley

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