Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1986-01-21
1987-07-28
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 148 15, 148175, 148187, 148DIG24, 148DIG61:DIG.153, H01L 2904, H01L 21425, H01L 21265
Patent
active
046824073
ABSTRACT:
Implantation of oxygen or nitrogen in polysilicon layers to a dose above about 10.sup.15 ions/cm.sup.2 retards rapid grain boundary migration of conventional dopants such as B, P, As, Sb, and the like during dopant activation. Pre-annealing of the poly films to increase the grain size also decreases rapid grain boundary migration. The efffects can be combined by first pre-annealing and then implanting oxygen or nitrogen before introducing the dopant. It is desirable to anneal the oxygen implant before introducing the dopant to allow for oxygen diffusion to the grain surfaces where is precipitates and blocks the grain boundaries. Vertical and lateral migration of the dopants can be inhibited by placing the implanted oxygen or nitrogen between the dopant and the location desired to be kept comparatively free of dopants. When very high dopant activation temperatures are used the blocking effect of the oxygen on the grain boundaries is overwhelmed by dopant diffusion through the grains.
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Gregory Richard B.
Varker Charles J.
Wilson Syd R.
Handy Robert M.
Motorola Inc.
Roy Upendra
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