MCT providing turn-off control of arbitrarily large currents

Details MCT providing turn-off control of arbitrarily large currents MCT providing turn-off control of arbitrarily large currents

1988-09-01

1990-09-18

Hille, Rolf

357 234, 357 39, 357 57, H01L 2974

Patent

active

049582119

ABSTRACT:
An MOS controlled thyristor (MCT) provides insulated gate control of turn-off from the regenerative state for arbitrarily large currents. An emitter region of the thyristor is provided with a high injection efficiency portion which is resistively connected to an ohmic contact to the main power electrode for that emitter region. The turn-off gate controls a channel region through that emitter region which connects a source region to the adjacent base region. During gate induced turn-off, the resistive connection of the high efficiency emitter region to the power electrode provides an additional voltage drop over that of a forward biased junction to encourage the flow of carriers through the channel region into the source region to bypass the emitting junction.

REFERENCES:
patent: 4261001 (1981-04-01), Temple
patent: 4541002 (1985-09-01), Shimada
patent: 4639762 (1987-01-01), Neilson et al.
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4680604 (1987-07-01), Nakagawa et al.
patent: 4717940 (1988-01-01), Shinohe et al.
patent: 4782372 (1988-11-01), Nakagawa et al.
U.S. Patent Application entitled "Controlled Turn-On Thyristor", by V.A.K. Temple, Ser. No. 857,201, filed Apr. 29, 1986 as a continuation of Ser. No. 626,165, filed June 29, 1984, both now abandoned; application Ser. No. 119,283 filed Oct. 20, 1987 is a file wrapper continuation of Ser. No. 857,201.
Temple, Victor A. K., "Controlled Turn-On Thyristors", IEEE Transactions on Electron Devices, vol. ED-30, No. 7, Jul., 1983, pp. 816-824.

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