MBE Source bakeout system

Details MBE Source bakeout system MBE Source bakeout system

1983-11-10

1986-02-11

Bernstein, Hiram H.

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

156DIG103, 118726, C30B 06

Patent

active

045698295

ABSTRACT:
A molecular beam epitaxy system including a growth chamber and an analysis chamber, both connected to ultrahigh vacuum pump systems. The analysis chamber includes a source outgassing mount, so that, while growth is proceeding in the growth chamber, a newly received source can be outgassed in the special mount connected to the analysis chamber. Preferably the exhausted cryogenic gases from the cryo shield in the growth chamber are used to cool the source outgassing mount on the analysis chamber, to minimize the contamination of the analysis chamber by contaminants outgassed.

REFERENCES:
patent: 4464342 (1984-08-01), Tsang
Pamplin, Crystal Growth 2nd Ed. Pergamon, NY, 1980 pp. 221-228.

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