Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Coating
Patent
1992-08-28
1994-09-27
King, Roy V.
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Coating
505729, 505730, 505473, 427 62, 427575, 427576, 4271263, 427314, B05D 306, B05D 512
Patent
active
053507371
ABSTRACT:
In a process for preparing a thin film of oxide superconductor having a layered crystal structure by depositing each layer of said layered crystal structure on a substrate by Molecular Beam Epitaxy (MBE) method with introducing oxygen-containing gas which is excited by irradiation of microwave, improvement in that a film-forming operation by the MBE method is interrupted temporarily after predetermined numbers of constituent layers which correspond to one unit crystal or less than one unit crystal are layered so that the deposited constituent layers are left in an activated oxygen atmosphere to effect a crystallization promotive operation, before the next film-forming operation is restarted.
REFERENCES:
Japanese Journal of Applied Physics, vol. 28, No. 10, Nakayama et al, "Epitaxial growth of Bi-Sr-Ca-Cu-O thin films by molecular beam epitaxy technique with shutter control," pp. 1809-1811 (Oct. 1989).
Journal of Vacuum Science and Technology: Part B, vol. 7, No. 2, Eckstein et al, "Epitaxial growth of high-temperature superconducting thin films," pp. 319-323 (Mar. 1989).
Journal of Crystal Growth, vol. 95, No. 1-4, Harris et al, "MBE growth of high critical temperature superconductors," pp. 607-616 (Feb. 11, 1989).
Journal of Crystal Growth, vol. 102, No. 3, Schlom et al, "Molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O compounds," pp. 361-375 (May 1990).
Webb et al, "Growth of High Tc Superconducting Thin Films Using Molecular Beam Epitaxy Technique", Appl. Phys. Lett. 51(15) Oct. 1987 pp. 1191-1193.
Eckstein et al, "Atomically Layered Heteroepitaxial Growth of Single-Crystal Films of Superconducting Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x," Appl. Phys. Lett. 57(9) Aug. 1990, pp. 931-933.
Harada Keizo
Itozaki Hideo
Yazu Shuji
King Roy V.
Sumitomo Electric Industries Ltd.
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