MBE or MO-MBE process for forming Bi-Sr-Ca-Cu-O superconducting

Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Coating

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505730, 505742, 427 62, 4271263, 156603, 156610, B05D 512, C30B 2300, H01L 3924

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053004841

ABSTRACT:
A method of forming a Bi-Sr-Ca-Cu-O system (Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.x) superconducting thin film in which two half-unit cells constitute a Perovskite structure layer, characterized in that Sr and Bi layers, which are present between said half-unit cells, are each deposited without oxidation by using an MBE process or an MO-MBE process with an atomic layer level control capability. A critical current density of the Bi-Sr-Ca-Cu-O system superconducting thin film is not significantly reduced.

REFERENCES:
Journal of Crystal Growth, vol. 102, No. 3, May 1990, Amsterdam NL, pp. 361-375; Schlom: "Molecular Beam Epitaxial Growth of Layered Bi-Sr-Ca-Cu-O Compounds".
Japanese Journal of Applied Physics, vol. 29, No. 11, Nov. 1990, Tokyo, Japan pp. 2045-2048; Ishizuka: "Phase Control of Bi-Sr-Ca-Cu-O Thin Films Prepared by Coevaporation With RF Oxygen Plasma".
Tomoji Kawai: "Design an Synthesis of High Tc Superconducting Superlattice by Successive Deposition Method", Bulletin of the Japan Institute of Metals, vol. 29, No. 9, (1990), pp. 733-739.
J. N. Eckstein et al., "Epitaxial growth of high-temperature superconducting thin films", J. Vac. Sci. Technol. B7 (2), 1989, pp. 319-323.
Furukawa et al, "Preparation of Bi-Sr-Ca-Cu-O Films by MBE Using an Oxygen Radical Beam Source", Advanced in Superconductivity III, Nov. 1990 pp. 1069-1072.
Tsukamoto et al, "Low-Temperature Annealing Effect on Bi-Sr-Ca-Cu-O Thin Films Prepared by Layer-By-Layer Deposition", (Jpn. J. Appl. Phys. 3015A) May 1991 pp. 830-833.
Tsukada et al, "In-Situ Growth of Bi-Sr-Ca-Cu-O Films by Shutter-Controlled Molecular Beam Epitaxy", Supercond. Sci. Technol. 4 (1991) pp. 118-120.

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