MBE growth technology for high quality strained III-V layers

Details MBE growth technology for high quality strained III-V layers MBE growth technology for high quality strained III-V layers

1990-03-30

1992-02-25

Kunemund, Robert

Fishing, trapping, and vermin destroying

156611, 156612, 437105, 437107, 437110, 437111, 437133, 437945, 437936, 148 22, 148 25, 148DIG5, 148DIG18, H01L 21203, H01L 2938

Patent

active

050913352

ABSTRACT:
III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group II and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation to low temperature, and to permit the film to relax to equilibrium. The method of the invention 1) minimizes starting step density on sample surface; 2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 mono-layers at a time); 3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and 4) uses time-resolved RHEED to achieve aspects (1)-14 (3).

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