MBE growth of a semiconductor laser diode

Details MBE growth of a semiconductor laser diode MBE growth of a semiconductor laser diode

2011-01-11

2011-01-11

Prenty, Mark (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257SE21097

Reexamination Certificate

active

07867799

ABSTRACT:
A method of fabricating a continuous wave semiconductor laser diode in the (Al,Ga,In)N materials system comprises: growing, in sequence, a first cladding region (4), a first optical guiding region (5), an active region (6), a second optical guiding region (7) and a second cladding region (8). Each of the first cladding region (4), the first optical guiding region (5), the active region (6), the second optical guiding region (7) and the second cladding region (8) is deposited by molecular beam epitaxy.

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