MBE growth method for high level devices and integrations

Details MBE growth method for high level devices and integrations MBE growth method for high level devices and integrations

1992-04-30

1993-11-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437133, 437237, H01L 21203

Patent

active

052583279

ABSTRACT:
A method for forming an epitaxial region on a semiconductor wafer substrate of III-V compound composition. After deposition of a dielectric mask, a seed layer that includes indium is evaporated over the wafer. A layer of III-V material is then deposited over the surface of the wafer by MBE growth. The seed layer acts to create uniformly distributed nucleation cites that are randomly spaced over the surface of the dielectric material and causes a reduction of the surface mobility of the atoms during the epitaxial growth process so that the residual polycrystalline material form atop the dielectric mark exhibits enhance surface morphology. As a result, the direct placement of interconnects on the polycrystalline material is achieve and the costly and time-consuming step of removing both the polycrystalline material and the dielectric mask of the prior art is avoided.

REFERENCES:
patent: 4075651 (1978-02-01), James
patent: 4939102 (1990-07-01), Hamm et al.
patent: 4948751 (1990-08-01), Okamoto et al.
patent: 5026655 (1991-06-01), Ohata

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