MBE apparatus and gas branch piping apparatus

Details MBE apparatus and gas branch piping apparatus MBE apparatus and gas branch piping apparatus

1995-11-21

1997-04-01

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723MP, 118692, C23C 1600

Patent

active

056161816

ABSTRACT:
An MBE apparatus includes a reaction chamber in which a molecular beam of a gas irradiates a substrate for crystal growth; a gas bomb containing the gas; a regulator for reducing the pressure of the gas from the gas bomb; a pressure control apparatus having one or more anode and cathode electrodes, a coil for generating a magnetic field applied to the supplied gas, and a controller for controlling the electric field between the anode and cathode electrodes, the area of the anode and cathode electrodes, and the magnetic field generated by the coil, so that a molecular beam irradiates the substrate with the gas supplied. The supply of the gas may be quickly varied with high reproducibility and high precision. In addition, a semiconductor layer having a uniform carrier concentration can be easily formed on the semiconductor substrate or a semiconductor layer having a uniform composition ratio can be easily formed on the semiconductor substrate.

REFERENCES:
patent: 4138306 (1979-02-01), Niwa
patent: 4522647 (1985-06-01), Ninomiya et al.
patent: 4849249 (1989-07-01), Ishihara et al.
patent: 4867859 (1989-09-01), Harada et al.
patent: 5010842 (1991-04-01), Oda et al.
patent: 5203958 (1993-04-01), Arai et al.
patent: 5383984 (1995-01-01), Shimada et al.

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