Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-09-06
1998-03-17
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257191, 257103, H01L 2906
Patent
active
057290296
ABSTRACT:
N-type doping in III-V-nitride semiconductor compounds, i.e. GaN-based compounds such as GaN, AlGaN, AlInN, InGaN, or AlGaInN, can be optimized to improve N-contact electrical resistance, carrier injection, forward voltage, and recombination characteristics without inducing cracking of the device layers. The N-type layer is constructed of sub-layers such that an N-type sub-layer is provided for each desired characteristic or property. The thickness of each sub-layer is carefully selected to avoid material cracking: the higher the required doping, the smaller the corresponding thickness. In illustration, the buffer layer of a light emitting device (LED) has three sub-layers. The first sub-layer is lightly doped to avoid cracking and is grown to the desired thickness for good material quality. The second sub-layer is heavily doped to provide good N-contact and electrical resistivity characteristics and is kept correspondingly as thin as necessary to avoid material cracking. The third sub-layer is doped to the desired level to provide optimum carrier injection and pair recombination in the active layer of the device.
REFERENCES:
patent: 5583879 (1996-12-01), Yamazaki et al.
patent: 5606185 (1997-02-01), Nguyen et al.
Hewlett--Packard Company
Jackson Jerome
Kee Pamela Lau
Kelley Nathan K.
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