Maximization of low dielectric constant material between interco

Details Maximization of low dielectric constant material between interco Maximization of low dielectric constant material between interco

1997-02-25

1999-11-23

Niebling, John F.

Semiconductor device manufacturing: process

Chemical etching

438700, 438735, H01L 21302

Patent

active

059900091

ABSTRACT:
A structure and method of maximizing the volume of low dielectric constant material between adjacent traces of a conductive interconnect structure. A semiconductor structure includes a semiconductor substrate, a first insulating layer located over the semiconductor substrate, a conductive interconnect layer having a plurality of conductive traces located over the first insulating layer, and a patterned insulating layer located over the patterned interconnect layer. One or more trenches are formed in the upper surface of the first insulating layer. These trenches, which do not extend completely through the first insulating layer, are located between adjacent traces of the interconnect layer. A dielectric material having a low dielectric constant is located in these trenches, and between adjacent traces of the patterned interconnect layer. The trenches advantageously maximize the volume of low dielectric constant material which is located between the traces.

REFERENCES:
patent: 4568410 (1986-02-01), Thornquist
patent: 4863879 (1989-09-01), Kwok
patent: 4986878 (1991-01-01), Malazgirt et al.
patent: 5003062 (1991-03-01), Yen
patent: 5128279 (1992-07-01), Nariani et al.
patent: 5201993 (1993-04-01), Langley
patent: 5364818 (1994-11-01), Ouellet
patent: 5403780 (1995-04-01), Jain et al.
patent: 5413963 (1995-05-01), Yen et al.
patent: 5422312 (1995-06-01), Lee et al.
patent: 5442211 (1995-08-01), Kita
patent: 5453406 (1995-09-01), Chen
patent: 5457073 (1995-10-01), Ouellet
patent: 5482900 (1996-01-01), Yang
patent: 5486488 (1996-01-01), Kamiyama
patent: 5567970 (1996-10-01), Sheu et al.
patent: 5591681 (1997-01-01), Wristers et al.
patent: 5607773 (1997-03-01), Ahlburn et al.
patent: 5710076 (1998-01-01), Dai et al.
patent: 5731604 (1998-03-01), Kinzer
patent: 5759906 (1998-07-01), Lou
patent: 5767012 (1998-07-01), Fulford, Jr. et al.

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