Maufacturing method of semiconductor devices

Details Maufacturing method of semiconductor devices Maufacturing method of semiconductor devices

1991-05-24

1992-10-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 27, 437162, 437150, H01L 21265

Patent

active

051531461

ABSTRACT:
Formed on the element region of an n-type semiconductor substrate is a silicon oxide layer, on which a polysilicon layer is formed. Boron ions, p-type impurities, are then implanted into the polysilicon layer, from which boron diffuses into the element region via the silicon oxide layer, with the result that a p-channel region of the p-channel MOS transistor is formed.

REFERENCES:
patent: 4764478 (1988-08-01), Hiruta
patent: 5091328 (1992-02-01), Miller

Affiliated with

Also associated with

Rating

Maufacturing method of semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Maufacturing method of semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Maufacturing method of semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1188853