Matrix of photosensitive elements combining a phototransistor wi

Details Matrix of photosensitive elements combining a phototransistor wi Matrix of photosensitive elements combining a phototransistor wi

1988-11-07

1990-03-06

James, Andrew J.

357 32, 357 34, 357 237, 357 4, H01L 2714

Patent

active

049070541

ABSTRACT:
Disclosed is a matrix of photosensitive elements for imaging. This matrix comprises, in series between a row conductor and a column conductor, a capacitor in series with a NIPIN or PINIP type phototransistor. This phototransistor can be made conductive, for the reading of the charges stored in the memory, as easily as a photodiode, even in darkness. The phototransistor is preferably formed by a stacking of N type, intrinsic type, P type, intrinisic type and N type semiconducting layers.

REFERENCES:
patent: 3679826 (1972-07-01), Crowell
patent: 4633287 (1986-12-01), Yamazaki
Patent Abstracts of Japan, vol. 7, No. 255(E-210) [1400], Nov. 12, 1983; & JP-A-58 141 561.

Affiliated with

Also associated with

Rating

Matrix of photosensitive elements combining a phototransistor wi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Matrix of photosensitive elements combining a phototransistor wi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Matrix of photosensitive elements combining a phototransistor wi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-51572