Matrix of photosensitive elements associating a photodiode or a

Details Matrix of photosensitive elements associating a photodiode or a Matrix of photosensitive elements associating a photodiode or a

1991-02-25

1993-07-06

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 53, 257448, 257458, 257459, 257463, 257466, 257532, 257656, H01L 2714, H01L 3100, H01L 2702

Patent

active

052257061

ABSTRACT:
In a matrix array of photosensitive elements, each photosensitive point is provided with a photosensitive element (pin photodiode) in series with a capacitor between a row lead and a column lead. It is proposed to make use of a simplified photosensitive element in which an end semiconductor layer is suppressed such as, for example, the n-layer of a pin photodiode or the n-layer of a five-layer phototransistor of the nipin type. The dielectric of the capacitor then comes directly into contact with an intrinsic semiconductor layer in which electrons accumulate. These electrons reconstitute the equivalent of an n-type doped layer.

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patent: 4839709 (1989-06-01), Zurakowski
patent: 4868614 (1989-09-01), Yamazaki
patent: 5032540 (1991-07-01), Follegot

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