Matrix memory (virtual ground)

Details Matrix memory (virtual ground) Matrix memory (virtual ground)

1997-01-08

1998-03-24

Nelms, David C.

Static information storage and retrieval

Read only systems

Semiconductive

36518911, G11C 1700

Patent

active

057320136

ABSTRACT:
A matrix memory with memory transistors arranged in rows and columns. The memory transistors can be addressed via word lines and bit lines. Control transistors are driven via control lines. The control transistors can short-circuit all of the columns of the cell array, i.e. the bit lines, except for the column in which a memory cell is located which is to be read out.

REFERENCES:
patent: 5117389 (1992-05-01), Yiu
"Alternate Metal Virtual Ground EPROM Array Implemented in a Process for Very High Density Applications" (Kazerounian et al.), IEDEM 91-311, 1991, pp. 11.5.1-11.5.4.
"A 65nc 1 Mb CMOS Alternate Metal Virtual Ground EPROM With Dual Reference Sensing Scheme and Word Line Voltage Regulator" (Hoang et al.), 1993, VLSITSA, pp. 336-338.
"Alternate Metal Virtual Ground (AMG) -A New Scaling Concept for Very High-Density EPROM's" (Eitan et al.), IEEE Electron Device Letters, vol. 12, No. 8, Aug. 1991, pp. 450-452, as mentioned on p. 3 of the specification.

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