Matrix infrared detector

Details Matrix infrared detector Matrix infrared detector

1982-08-06

1986-01-21

James, Andrew J.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 30, 357 31, 357 40, 357 45, 357 20, 250330, 250332, 250370, H01L 3114

Patent

active

045660247

ABSTRACT:
The detector of the invention comprises a first semi-conductor wafer of type n, or p, with zones of type p, or n, extending from one to the other of the two faces of the wafer, and a second wafer for processing the signals delivered by the wafer exposed to the infrared radiation. The zones of the first wafer are connected to the face of the second wafer facing the first wafer by studs extending along the face of the first wafer facing the second wafer. The invention makes it possible to obtain an infrared detector for a camera which is quick and economical to manufacture.

REFERENCES:
patent: 3179542 (1965-04-01), Quinn et al.
patent: 3742238 (1973-06-01), Hoffman, II
patent: 3963926 (1976-06-01), Borrello
patent: 4030116 (1977-06-01), Blumenfeld
patent: 4039833 (1977-08-01), Thom
patent: 4257057 (1981-03-01), Cheung et al.
patent: 4441791 (1984-04-01), Hornbeck
Kohn et al., "1-2 Micron (Hg,Cd) Te Photodetectors", IEE Transactions on Electron Devices, vol. ED-16, No. 10, Oct. 1969, pp. 885-890.

Affiliated with

Also associated with

Rating

Matrix infrared detector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Matrix infrared detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Matrix infrared detector will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2300878