Matrix array of semiconducting elements

Details Matrix array of semiconducting elements Matrix array of semiconducting elements

1980-12-05

1983-08-23

Munson, Gene M.

357 15, 357 46, 357 48, H01L 2710, H01L 2702, H01L 2704, H01L 2956

Patent

active

044007132

ABSTRACT:
Integrated matrix array the points of which are defined by the intersection of the parallel lines of a first set with the parallel lines of a second set, said points being provided, or not provided, with semiconducting elements which have a first electrode connected to a line of the first set and a second electrode connected to a line of the second set, the array being of the type in which the first electrodes of the elements in each column or row are defined in a common semiconducting region, the second electrodes being provided only in the positions in which a semiconducting element is to be operative, said array being arranged such that:

REFERENCES:
Barrett et al., "Design Considerations for a High-Speed Bipolar Read-Only Memory" IEEE J. Solid-State Circuits, vol. SC-5 (10/70) pp. 196-202.
Gunn et al., "A Bipolar 16K ROM Utilizing Schottky Diode Cells" IEEE Int. Solid-State Circuits Conference (2/77) Dig. Technical Papers, pp. 118-119.
Gaensslen "Schottky Barrier Read-Only Memory" IBM Technical Disclosure Bulletin , vol. 14 (6/71) p. 252.

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