Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-08-23
2011-08-23
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S445000, C257S463000, C257S059000, C257S072000, C257SE31111, C257SE27132, C257SE27139, C438S073000
Reexamination Certificate
active
08004057
ABSTRACT:
A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
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Sargent Edward
Tian Hui
Ho Tu-Tu V
InVisage Technologies, Inc.
Schwegman Lundberg & Woessner, P.A.
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