Materials, systems and methods for optoelectronic devices

Details Materials, systems and methods for optoelectronic devices Materials, systems and methods for optoelectronic devices

2011-04-12

2011-04-12

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S445000, C257S463000, C257S059000, C257S072000, C257SE31111, C257SE27132, C257SE27139, C438S073000

Reexamination Certificate

active

07923801

ABSTRACT:
A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

REFERENCES:
patent: 5225921 (1993-07-01), Audas et al.
patent: 5608255 (1997-03-01), Martin et al.
patent: 2001/0055008 (2001-12-01), Young et al.
patent: 2003/0063706 (2003-04-01), Ikeda et al.
patent: 2003/0071196 (2003-04-01), Seitz
patent: 2005/0205850 (2005-09-01), Whiteford et al.
patent: 2005/0205879 (2005-09-01), Fukunaga
patent: 2006/0181629 (2006-08-01), Miyashita et al.
patent: 2006/0261331 (2006-11-01), Yukawa
patent: 2006/0267054 (2006-11-01), Martin et al.
patent: 2007/0052055 (2007-03-01), McKee
patent: 2007/0108487 (2007-05-01), Inoue et al.
patent: 2007/0120045 (2007-05-01), Yokoyama
patent: 2007/0153109 (2007-07-01), Lule
patent: 2007/0216777 (2007-09-01), Quan et al.
patent: 2007/0236590 (2007-10-01), Harris
patent: 2007/0273775 (2007-11-01), Jiang
patent: 2008/0017845 (2008-01-01), Drndic et al.
patent: 2008/0067387 (2008-03-01), Mouttet
patent: 2008/0173964 (2008-07-01), Akram
patent: 2009/0257671 (2009-10-01), Fridrich et al.
patent: 2010/0019334 (2010-01-01), Ivanov et al.
patent: 2010/0019335 (2010-01-01), Ivanov et al.
patent: 2010/0044676 (2010-02-01), Sargent et al.
patent: 2010/0187404 (2010-07-01), Klem
patent: 2010/0187408 (2010-07-01), Klem
patent: WO-2008131313 (2008-10-01), None
patent: WO-2009129540 (2009-10-01), None
patent: WO-2010082955 (2010-07-01), None
Takada, Shunji, et al., “CMOSs Image Sensor with Organic Photoconductive Layer Having Narrow Absorption Band and Proposal of Stack Type Solid-State Image Sensors”,Sensors, Cameras, and Systems for Scientific/Industrial Applications,VII, edited by Morley M. Blouke,Proc. of SPIE-IS&T Electronic Imaging, SPIEvol. 6068, 6068A, (2006), 6068A-1-6068A-8.
“U.S. Appl. No. 12/426,854 Non-Final Office Action mailed Nov. 2, 2010”, 7 pgs.
“U.S. Appl. No. 12/728,181 Non-Final Office Action mailed Oct. 12, 2010”, 16 pgs.
“U.S. Appl. No. 12/728,184 Non-Final Office Action mailed Oct. 13, 2010”, 13 pgs.

Affiliated with

Also associated with

Rating

Materials, systems and methods for optoelectronic devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Materials, systems and methods for optoelectronic devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Materials, systems and methods for optoelectronic devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2719157