Coherent light generators – Particular active media – Semiconductor
Patent
1993-09-14
1995-02-28
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
257103, 257 13, 257 79, H01S 319
Patent
active
053944224
ABSTRACT:
A material for use in a laser heterostructure which is lattice matched material to ZnSe and has a high band gap. The material is Mg.sub.y Zn.sub.1-y S.sub.x Se.sub.1-x with the ratio of sulphur to magnesium of 0.26/0.19. Lasing devices constructed from layers of this material and ZnSe can be either electron beam pumped or electrically driven.
REFERENCES:
patent: 4549195 (1985-10-01), Bluzer
"Photoluminescence in ZnSe Grown by Liquid-Phase Epitaxy from Zn-Ga Solution" S. Fujita et al., J. Appl. Phys 50(2) Feb. 1979.
"Electron Beam Pumped Laser Emission from ZnSxSe1-X" J. R. Onstott, IEEE Journal of Quantum Electronics, Mar. 1977.
"Luminescence Properties of MgZn1-XSe Prepared by Mg Diffusion", Journal of Electronic Materials, vol. 12, No. 4, 1983 no month for reference.
"Energy Bandgap and Lattice Constant Contours of II-VI Quanternary Alloys" T. Ido et al., J. of Electronic Mat. L9(5), 1980, pp. 869-883 no month for reference.
Epps Georgia Y.
North America Philips Corporation
Spain Norman N.
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