Materials and methods for low pressure chemical-mechanical...

Details Materials and methods for low pressure chemical-mechanical... Materials and methods for low pressure chemical-mechanical...

2005-07-19

2005-07-19

Nguyen, Dung Van (Department: 3723)

Abrading

Abrading process

Glass or stone abrading

C451S057000

Reexamination Certificate

active

06918821

ABSTRACT:
Provided are materials and methods for the chemical mechanical planarization of material layers using a down force of less than about 2.5 psi while maintaining a material removal rate generally similar to that obtained using higher down forces while simultaneously improving the selectivity of the process with respect to a primary material formed over a barrier material. The materials and methods disclosed herein are suitable for use in meatallization operations during semiconductor device fabrication, in particular in processes in which the primary material is a softer metal such as copper and the barrier material is a harder material such as a metal nitride.

REFERENCES:
patent: 6019670 (2000-02-01), Cheng et al.
patent: 6685540 (2004-02-01), Cherian et al.
patent: 2003/0013387 (2003-01-01), Tsai et al.

Affiliated with

Also associated with

Rating

Materials and methods for low pressure chemical-mechanical... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Materials and methods for low pressure chemical-mechanical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Materials and methods for low pressure chemical-mechanical... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3372307