Materials and methods for chemical-mechanical planarization

Details Materials and methods for chemical-mechanical planarization Materials and methods for chemical-mechanical planarization

2005-06-28

2005-06-28

Wilson, Lee D. (Department: 3723)

Abrading

Abrading process

Glass or stone abrading

C451S056000, C451S443000, C051S302000

Reexamination Certificate

active

06910951

ABSTRACT:
Provided are materials and methods for the chemical mechanical planarization of material layers such as oxide or metal formed on semiconductor substrates during the manufacture of semiconductor devices using a fixed abrasive planarization pad having an open cell foam structure from which free abrasive particles are produced by conditioning and combined with a carrier liquid to form an in situ slurry on the polishing surface of the planarization pad that, in combination with relative motion between the semiconductor substrate and the planarization pad, tends to remove the material layer from the surface of the semiconductor substrate. Depending on the composition of the material layer, the rate of material removal from the semiconductor substrate may be controlled by manipulating the pH or the oxidizer content of the carrier liquid.

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