Material systems for semiconductor tunnel-junction structures

Details Material systems for semiconductor tunnel-junction structures Material systems for semiconductor tunnel-junction structures

2006-04-25

2006-04-25

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S013000, C257S079000, C257S103000, C257S104000, C257S183000, C257S918000, C438S022000, C438S024000, C438S025000, C438S028000, C438S029000, C438S046000, C438S047000

Reexamination Certificate

active

07034331

ABSTRACT:
The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.

REFERENCES:
patent: 5679963 (1997-10-01), Klem et al.
patent: 5944913 (1999-08-01), Hou et al.
patent: 6372980 (2002-04-01), Freundlich
patent: 2002/0090016 (2002-07-01), Coldren et al.
Ortsiefer, Markus, “Low Resistance InGa(Al) as Tunnel Junctions for Long Wavelength Vertical-Cavity Surface-Emitting Lasers”, Jpn J. Appl. Phys. Vol. 39 (2000), pp. 1727-1729.

Affiliated with

Also associated with

Rating

Material systems for semiconductor tunnel-junction structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Material systems for semiconductor tunnel-junction structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Material systems for semiconductor tunnel-junction structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3551911