Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-01-09
2007-01-09
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S043000, C257S079000, C257SE51001, C257SE51018, C257SE51022
Reexamination Certificate
active
10654462
ABSTRACT:
A material including a glass or vitroceramic substrate having a first layer and a second layer deposited thereon, each of the first and second layers including at least one transparent conducting oxide (TCO). The first layer has a roughness of more than 1 nm and the second layer has a roughness less than or equal to 1 nm. A transmittance in the visible wavelength range of the material is at least 80%. The work function of the second layer is greater than the work function of the first layer and is greater than 4.6 eV.
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D. Vaufrey et al., “Sol Gel Deposited Sb Doped SnO2 as Transparent Anode for OLED: Process, Patterning and Hole Injection Characteristics”, Proc. SPIE, vol. 4464, pp. 103-112.
Aegerter Michel André
Dahmani Brahim
Guzman Guillaume
Pütz Jörg
Able Kevin M.
Beall Thomas R.
Corning Incorporated
Nguyen Joseph
Parker Kenneth
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