Coating processes – Electrical product produced – Metallic compound coating
Reexamination Certificate
2007-03-27
2007-03-27
Brunsman, David M. (Department: 1755)
Coating processes
Electrical product produced
Metallic compound coating
C427S126200, C106S287160
Reexamination Certificate
active
10969185
ABSTRACT:
A material for forming an insulation film comprising an alkoxide compound of lithium and at least one kind of organic solvent selected from ether, ketone, ester, alcohol, and hydrocarbon. A material for forming an insulation film comprising a carboxylate of lithium, an organic solvent, and tetramethoxysilane or tetraethoxysilane. A film-forming method for forming an insulation film with the use of the material for forming an insulation film. An insulation film-forming over the various substrates by spin coating method, mist deposition method or CVD method with the use of these material becomes possible and enables to expect providing an insulation film of high quality and high purity containing lithium or lithium silicate.
REFERENCES:
patent: 5569320 (1996-10-01), Sasaki et al.
patent: 5630872 (1997-05-01), Ogi et al.
patent: 6085015 (2000-07-01), Armand et al.
patent: 6100415 (2000-08-01), Takamatsu et al.
patent: 6126743 (2000-10-01), Saegusa et al.
patent: 6329101 (2001-12-01), Kawakami
patent: 6617264 (2003-09-01), Hsiao et al.
patent: 2002/0182322 (2002-12-01), McCaughan et al.
patent: 2002/0195591 (2002-12-01), Ravet et al.
Ishii Takafumi
Kiriyama Koji
Soejima Nobumasa
Takamatsu Yukichi
Tonari Kazuaki
Antonelli, Terry Stout and Kraus, LLP.
Brunsman David M.
Japan Pionics Co., Ltd.
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