Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2010-03-22
2010-11-09
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S118000, C438S622000, C524S588000, C525S474000, C525S477000, C528S034000, C528S026000, C528S029000, C528S014000, C528S035000
Reexamination Certificate
active
07830012
ABSTRACT:
To provide a material for forming an exposure light-blocking film which includes at least one of a silicon compound expressed by the following structural formula (1) and a silicon compound expressed by the following structural formula (2), wherein at least one of R1and R2is replaced by a substituent capable of absorbing exposure light.(where R1and R2may be the same or different, and each represents any one of a hydrogen atom, alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)(where R1, R2and R3may be the same or different, at least one of R1, R2and R3represents a hydrogen atom and the others represent any one of an alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater).
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Nakata Yoshihiro
Ozaki Shirou
Fujitsu Limited
Green Telly D
Westerman Hattori Daniels & Adrian LLP
Wilczewski Mary
LandOfFree
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