Matching circuit for high frequency transistor

Details Matching circuit for high frequency transistor Matching circuit for high frequency transistor

1990-08-03

1991-12-24

Gensler, Paul

Wave transmission lines and networks

Coupling networks

With impedance matching

333161, 333247, H01P 508

Patent

active

050756451

ABSTRACT:
In a matching circuit for a high-frequency transistor, using a microstrip line for the main line and having a high-frequency transistor side main line shaped in a taper form, a thin-film capacitor and a grounding circuit are disposed between the taper part and the ground. The length of the parts of the thin-film capacitor is different in the signal traveling directions or the shape of the grounding circuit is different so that the impedance is matched at the output position of the thin-film capacitor part, while the spatial phase difference of high-frequency signals can be compensated at the same time.

REFERENCES:
patent: 3419813 (1968-12-01), Kamnitsis
patent: 4272731 (1981-06-01), Day et al.
"Microwave Integrated-Circuit Technology-A Survey", IEEE Journal of Solid-State Circuits, vol. SC-5, No. 6, Dec. 1970, pp. 292-303.
"Broad-Band Internal Matching of Microwave Power GaAs MESFET's", IEEE Transactions of Microwave Theory and Techniques, vol. MTT-27, No. 1, Jan. 1979, pp. 3-8.

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