Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1986-12-31
1988-06-28
Gensler, Paul
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, 333 32, 333 33, 455317, 455327, H03F 316, H03F 738
Patent
active
047542292
ABSTRACT:
A microwave matching circuit, having a main line (for transmitting a high frequency signal) and a stub, formed close to the main line (for matching the input terminal of the high-frequency signal and the output terminal of the main line) includes a capacitor, for absorbing unnecessary components at the main line and other output terminals, connected between the main line and the stub.
REFERENCES:
patent: 4352076 (1982-09-01), Saitoh et al.
patent: 4460879 (1984-07-01), Hirose
patent: 4658220 (1987-04-01), Heston et al.
Tserng et al., Design, Fabrication, and Characterization of Monolithic, Microwave GaAs Power FET Amplifiers, IEEE Trans. on E.D., 2/81, pp. 183-190.
The New Frontier, 13-cm GaAs FET Preamp, QST, Aug. 1984, p. 65.
Kawakami Toshimasa
Kudo Katsuya
Gensler Paul
Kabushiki Kaisha Toshiba
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