Wave transmission lines and networks – Coupling networks – With impedance matching
Patent
1998-06-04
2000-10-10
Pascal, Robert
Wave transmission lines and networks
Coupling networks
With impedance matching
330302, H03H 738
Patent
active
061305898
ABSTRACT:
A matching circuit is formed by a series inductor, a parallel capacitor, a drain bias circuit, and a DC-blocking capacitor for the purpose of impedance matching. A capacitor having a capacitance that is dependent upon the bias voltage is used as the parallel capacitor. This can be, for example, a material such as a (Ba.sub.X Sr.sub.1-X)TiO.sub.3 thin-film, which exhibits a capacitance having a bias voltage dependency. Because this thin-film capacitor exhibits polarization by an electrical field, its capacitance is the largest with a bias of 0 volts, and is reduced to approximately 50% as the bias voltage is increased. By using this capacitor in a matching circuit, it is possible to change the matching condition as the output power is increased, that is, as the voltage applied to the capacitor is increased. By considering both the condition which results in good transistor output power and the condition which results in good distortion characteristics, it is possible to achieve a design in which the matching conditions are changed from a condition that emphasizes output power, to a condition that emphasizes low distortion, as the output power increases.
REFERENCES:
patent: 4048598 (1977-09-01), Knight
patent: 4090150 (1978-05-01), Vachenauer
patent: 4835485 (1989-05-01), Mueller
patent: 4994761 (1991-02-01), Craft
patent: 5095285 (1992-03-01), Khatibzadeh
patent: 5216392 (1993-06-01), Fraser et al.
patent: 5274341 (1993-12-01), Sekine et al.
patent: 5325067 (1994-06-01), Masuda et al.
patent: 5339048 (1994-08-01), Weber
patent: 5343172 (1994-08-01), Utsu et al.
patent: 5361403 (1994-11-01), Dent
patent: 5673001 (1997-09-01), Kim et al.
patent: 5708573 (1998-01-01), Lusher et al.
patent: 5880635 (1999-03-01), Satoh
"Application to the GaAs-IC Process of High Dielectgric SrTio.sub.3 thin Film Capacity Elements by Means of the Spattering Method" 55-60, Technology Report, vol. 93, No. 416, Jan. 20, 1994.
"SrTio.sub.3 Capacitor with relative Dielectric Constant of 200 on GaAs Substrate at Microwave Frequency", pp. L1683-L-1684, Japanese Journal of Applied Physics, vol. 35, Nov. 12, Dec. 15, 1996.
Iwata Naotaka
Yamaguchi Keiko
NEC Corporation
Pascal Robert
Summons Barbara
LandOfFree
Matching circuit and a method for matching a transistor circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Matching circuit and a method for matching a transistor circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Matching circuit and a method for matching a transistor circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2259868