Match line sensing amplifier for content addressable memory

Details Match line sensing amplifier for content addressable memory Match line sensing amplifier for content addressable memory

2006-06-27

2006-06-27

Lam, David (Department: 2827)

Static information storage and retrieval

Associative memories

Ferroelectric cell

C365S203000, C365S207000, C711S108000

Reexamination Certificate

active

07068527

ABSTRACT:
A method and apparatus for sensing a state of a memory circuit, in particular a content address memory (CAM) device are described. The method includes receiving a first current signal as an input, the first current signal corresponding to a state of the memory circuit, converting the first current signal into a first voltage signal, converting the first voltage signal into a second voltage signal and sensing the second voltage signal. The apparatus includes an input adapted to receive a first current signal, the first current signal corresponding to the state of the memory circuit; and a current mirror circuit having a first portion adapted to receive the first current signal and convert the first current signal to a first voltage signal and a second portion adapted to receive the first voltage signal and convert the first voltage signal into a second voltage signal as an output.

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B. Wicht, D. Schmitt-Landsiedel, and S. Paul, “A Simple Low Voltage Current Sense Amplifier with Switchable Input Transistor,” ESSCIRC 2001, Proc. of the 27thEuropean Solid-State Circuits Conference, Villach, Austria, pp. 300-303, Sep. 18-20, 2001.

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