Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2005-02-15
2005-02-15
Lam, David (Department: 2818)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S203000, C365S207000
Reexamination Certificate
active
06856528
ABSTRACT:
A method and apparatus for sensing a state of a memory circuit, in particular a content address memory (CAM) device are described. The method includes receiving a first current signal as an input, the first current signal corresponding to a state of the memory circuit, converting the first current signal into a first voltage signal, converting the first voltage signal into a second voltage signal and sensing the second voltage signal. The apparatus includes an input adapted to receive a first current signal, the first current signal corresponding to the state of the memory circuit; and a current mirror circuit having a first portion adapted to receive the first current signal and convert the first current signal to a first voltage signal and a second portion adapted to receive the first voltage signal and convert the first voltage signal into a second voltage signal as an output.
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patent: 6584003 (2003-06-01), Kim et al.
E. Seevinck, P.J. van Beers and H. Ontrop, “Current-Mode Techniques for High-Speed VLSI Circuits with Application to Current Sense Amplifier for CMOS SRAM's,” IEEE J. Solid-State Circuits, vol. 26, No. 4, pp 525-536, Apr. 1991.
B. Wicht, D. Schmitt-Landsiedel, and S. Paul, “A Simple Low Voltage Current Sense Amplifier with Switchable Input Transistor,” ESSCIRC 2001, Proc. of the 27thEuropean Solid-State Circuits Conference, Villach, Austria, pp. 300-303, Sep. 18-20, 2001.
Dickstein , Shapiro, Morin & Oshinsky, LLP
Lam David
Micro)n Technology, Inc.
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