Masterslice semiconductor device

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 41, 357 45, 357 68, H01L 2704

Patent

active

046689729

ABSTRACT:
A masterslice semiconductor device is provided, which reduces or eliminates unused transistors. In the basic cells of the masterslice semiconductor device, each transistor is formed as electrically independent from the others; i.e., each transistor has an individual gate electrode and has an individual region for the source and drain. Terminals formed in parallel to the gate channel of each transistor permits interconnection of the electrodes in a basic cell array using a straight wiring pattern. Such a straight interconnection reduces the effective number of wiring channels needed for a unit cell, and facilitates construction of a larger scale unit cell in a basic cell array.

REFERENCES:
patent: 4412237 (1983-10-01), Matsumura et al.
Electronics International, vol. 56, No. 3, Feb. 1983, "Gate Array Needs Fewer Gates for RAM", C. Cohen, pp. 86-87.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Masterslice semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Masterslice semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Masterslice semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-706980

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.