Mass transport of indium phosphide

Details Mass transport of indium phosphide Mass transport of indium phosphide

1985-05-20

1988-01-05

Straub, Gary P.

Fishing, trapping, and vermin destroying

156611, 156DIG70, 156DIG89, 156610, 148DIG65, 148DIG119, 4272552, C30B 2302, C30B 2306, C30B 2516, C30B 2940

Patent

active

047174439

ABSTRACT:
A mass transport process for use in the manufacture of semiconductor devices, particularly but not exclusively low threshold semiconductor lasers in the InP/InGaAsP system, involves the arrangement of a cover wafer (18) of the material to be grown adjacent to a semiconductor wafer (15) on which the material is to be grown, their disposition together with a crystalline alkali halide (20) in a crucible (16), and heating the crucible, which is almost but not completely sealed, in a hydrogen stream.
For the manufacture of InP/InGaAsP lasers and the growth of InP, the alkali halide may comprise KI, RbI or CsI and a controlled amount of In metal (21) may be optionally contained in the crucible (16) to control the balance between growth of InP for defining the laser active region and erosion of InP from other areas of the wafer. Growth is achieved at temperatures comparable with liquid phase epitaxy processing temperatures.

REFERENCES:
patent: 4365588 (1982-12-01), Jolly
Hasson et al., Appl. Phys. Lett., 43, 403+(1983).
Z. L. Liau and J. N. Walpole, "a Novel Technique for GaInAsP/InP Buried Heterostructure Laser Fabrication", Appl. Phys. Lett., vol. 40, No. 7, pp. 568-570 (1 Apr. 1982).
T. R. Chen, L. C. Chiu, K. L. Yu, U. Koren., A. Hasson, S. Margalit and A. Yariv, "Low Threshold InGaAsP Terrace Mass Transport Laser on Semi-Insulating Substrate", Appl. Phys. Lett., vol. 41, No. 12, pp. 1115-1117 (15 Dec. 1982).
A. Hasson, L. C. Chiu, T. R. Chen, U. Koren, Z. Rav-Noy, K. L. Yu, S. Margalit, and A. Yariv, "Selective Low-Temperature Mass Transport in InGaAsP/InP Lasers", Appl. Phys. Lett., vol. 43, No. 5 (1 Sep. 1983).

Affiliated with

Also associated with

Rating

Mass transport of indium phosphide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mass transport of indium phosphide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mass transport of indium phosphide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-7306