Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1994-10-11
1996-03-19
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430312, 430313, 428428, 428432, 378 34, 378 35, G03F 900
Patent
active
055003125
ABSTRACT:
A process for controlling the stress of multilayer films formed on a substrate is disclosed. A plurality of periods, each period having at least two layers of material wherein one of the layers of material is under compressive stress and the other layer of material is under tensile stress, are formed in a substrate. The stress in the multilayer film is controlled by selecting a thickness for the layer under compressive stress and a thickness for the layer under tensile stress that will provide a multilayer film of the desired stress. The thickness of each layer is about 0.5 nm to about 10 nm. Multilayer films with a stress of about -50 MPa to about 50 MPa are obtained using the present process. The present invention is also directed to masks with such multilayer films.
REFERENCES:
patent: 4998267 (1991-03-01), Lee et al.
patent: 5249554 (1993-10-01), Tamor et al.
patent: 5287081 (1994-02-01), Kinard et al.
patent: 5294808 (1994-03-01), Lo
patent: 5306946 (1994-04-01), Yamamoto
Y.-C. Ku et al. "In situ stress monitoring and deposition of zero-stress W for x-ray masks", J. of Vacuum Science & Tech. B9 pp. 3297-3300 (1991).
J. R. Maldanado, "X-Ray Lithography, Where it is Now, and Where it is Going" J. Electronic Materials, vol. 19, pp. 699-709 (1990).
R. K. Watts, "VLSI Technology", by S. M. Sze, Chapt. 4, 2nd edition 1988.
R. R. Kola et al. "Stress relaxation in Mo/Si multilayer structures" Appl. Phys. Lett vol. 60, pp. 3120-3122 (1992).
R. R. Kola et al. "Stable low-stress tungsten absorber technology for sub-half-micron x-ray lithography" J. Vac. Sci. Technol. B9 pp. 3301-3305 (1991).
K. Suzuki, et al. "X-ray mask technology: Low-stress tungsten deposition and sub-half micron absorber fabrication by single-layer resist" Microelectronic Engineering vol. 14, pp. 207-214 (1991).
Harriott Lloyd R.
Liddle James A.
Volkert Cynthia A.
Waskiewicz Warren K.
Windt David L.
AT&T Corp.
Botos Richard J.
Rosasco S.
LandOfFree
Masks with low stress multilayer films and a process for control does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Masks with low stress multilayer films and a process for control, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Masks with low stress multilayer films and a process for control will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1958599