Masks of semiconductor devices and methods of forming mask...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S394000

Reexamination Certificate

active

07655362

ABSTRACT:
Masks for semiconductor devices and methods of forming masks of semiconductor devices are provided which are capable of improving line resolution. A disclosed mask includes: a first mask pattern disposed on a first side of the mask. The first mask pattern includes light-blocking patterns and light-blocking fine auxiliary patterns within a light-transmitting region. The mask also includes a second mask pattern disposed on a second side of the mask. The second mask pattern includes light-transmitting fine auxiliary patterns within a light-blocking region. The light-transmitting fine auxiliary patterns are disposed at positions corresponding to the light-blocking fine auxiliary patterns to facilitate an overlapping exposing process. The second mask has the opposite tone of the first mask, and the second mask is disposed at a position horizontally-translated from a position of the first mask. Accordingly, pattern bridge regions in repeated patterns of a poly-cell transistor device can be selectively removed.

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patent: 2004/0053141 (2004-03-01), Pierrat
patent: 2005/0136338 (2005-06-01), Chang

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