Masks for charged-particle beam microlithography

Details Masks for charged-particle beam microlithography Masks for charged-particle beam microlithography

1997-05-19

1998-08-25

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, G03F 900

Patent

active

057981949

ABSTRACT:
Charged-particle beam masks are disclosed that comprise a plurality of mask subfields separated by a plurality of boundary regions. The subfields are formed in a scattering layer deposited on a membrane. The membrane is supported by a support structure provided in proximity to the boundary regions. In one embodiment, the support structure comprises a plurality of support beams, parallel to each other, and preferably formed by anisotropically etching a silicon wafer. A boron-doped layer of the silicon wafer forms the membrane.

REFERENCES:
patent: 5260151 (1993-11-01), Berger et al.
patent: 5585211 (1996-12-01), Firstein et al.
patent: 5624774 (1997-04-01), Okino et al.
Liddle et al., "Mask Fabrication for Projection Electron-Beam Lithography Incorporating the SCALPEL Technique," J. Vac. Sci. 9:3000-3004 (Nov. 1991).
Esashi, Masayoshi, "Micromachine," Appl. Phys. (Japan) 60:227-327 (Mar. 1991) (in the Japanese language with an English-language translation of the relevant portions).

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