Maskless reflection electron beam projection lithography

Details Maskless reflection electron beam projection lithography Maskless reflection electron beam projection lithography

2005-03-22

2005-03-22

Nguyen, Kiet T. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492230

Reexamination Certificate

active

06870172

ABSTRACT:
One embodiment disclosed relates to an apparatus for reflection electron beam lithography. An electron source is configured to emit electrons. The electrons are reflected to a target substrate by portions of an electron-opaque patterned structure having a lower voltage level and are absorbed by portions of the structure having a higher voltage level. Another embodiment relates to a novel method of electron beam lithography. An incident electron beam is formed and directed to an opaque patterned structure. Electrons are reflected from portions of the structure having a lower voltage level applied thereto and are absorbed by portions of the structure having a higher voltage level applied thereto. The reflected electrons are directed towards a target substrate to form an image and expose a lithographic pattern.

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