Maskless multiple sheet polysilicon resistor

Details Maskless multiple sheet polysilicon resistor Maskless multiple sheet polysilicon resistor

2007-07-10

2007-07-10

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S238000, C257SE21004

Reexamination Certificate

active

11109231

ABSTRACT:
The present invention facilitates semiconductor fabrication of semiconductor devices having polysilicon resistors. An oxide layer is formed over a semiconductor device (104). A polysilicon layer is formed on the oxide layer (106). The polysilicon layer is patterned to form a polysilicon resistor (108). A poly resistor mask having a selected percentage of the poly resistor exposed is formed on the poly resistor (110). A selected dopant is implanted (112), which modifies the resistivity of the poly resistor. The mask is removed (114) and a thermal activation process is performed (116) that diffuses the implanted dopant to a substantially uniform concentration throughout the polysilicon resistor.

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