Radiant energy – With charged particle beam deflection or focussing – With target means
Reexamination Certificate
2005-05-03
2005-05-03
Lee, John R. (Department: 2881)
Radiant energy
With charged particle beam deflection or focussing
With target means
C250S492300, C250S493100, C250S3960ML, C250S492100, C250S42300F
Reexamination Certificate
active
06888146
ABSTRACT:
A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.
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Barletta William A.
Gough Richard A.
Leung Ka-Ngo
Patterson David O.
Lee John R.
Milner Joseph R.
Sartorio Henry P.
The Regents of the University of California
Vanore David A.
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