Maskless method for fabricating a low-loss microwave power senso

Details Maskless method for fabricating a low-loss microwave power senso Maskless method for fabricating a low-loss microwave power senso

1998-08-19

2000-08-22

Bowers, Charles

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438749, 438234, 438700, 438200, 438199, 438706, H01L 21302, H01L 218238

Patent

active

061072109

ABSTRACT:
A method for forming a single cavity in a substrate, which may extend approximately the length of a device located on top of the substrate, and device produced thereby. The device has a length and a width, and may extend approximately the length of the substrate. After locating the device on the surface of the substrate, a first etchant is applied through openings on the surface of the substrate. Subsequently, a second etchant is applied through the same openings on the surface of the substrate. As a result, a single cavity is formed beneath the surface of the device, suspending the device and minimizing electrical coupling.

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