Masking techniques in chemical vapor deposition

Coating processes – Measuring – testing – or indicating

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156601, 156613, 427 9, 427 10, 427 531, 427 38, 427 86, 427 87, H01L 21203, H01L 21205

Patent

active

044487975

ABSTRACT:
Various mask configurations and techniques for their employment in a chemical vapor deposition system are disclosed. These masks can be utilized in the fabrication of semiconductor devices. The masks have at least one aperture therein and may be either removed after device processing or formed as an integral part of the semiconductor device being fabricated. In either case, semiconductor devices can be formed with one or more layers characterized by desired spatial variations in their thickness and/or contour. The integral masking techniques provide for incorporated self alignment which simplifies device processing. The fabrication of semiconductor injection lasers are disclosed as examples of applications of the masking techniques.

REFERENCES:
patent: 3978428 (1976-08-01), Burnham et al.
patent: 4053350 (1977-10-01), Olsen
patent: 4188244 (1980-02-01), Itoh
patent: 4249142 (1981-02-01), Burnham et al.
patent: 4251298 (1981-02-01), Thompson
patent: 4256816 (1981-03-01), Dunkleberger
patent: 4335461 (1982-06-01), Streifer et al.
patent: 4371966 (1983-02-01), Scifres et al.
Dupuis et al., "Preparation & Properties of Ga.sub.1-x Al.sub.x As-GaAs Heterostructure Lasers Grown by Mo-CVD", IEEE J. of QE, QE-15(3), pp. 128-135.
Dupuis, "Ga.sub.1-x Al.sub.x As-GaAs Heterostructure Lasers Grown by Mo-CVD", Jap. J. of A.P., vol. 19, Supp. 19-1, pp. 415-423, 1980.
Mori et al., "V-DH Laser: A Laser with AV-Shaped . . . by Mo-CVD"-Electronic Letters, vol. 16(20), pp. 785-787, 9/80.
Samid et al., "Embedded Heterostructure Epitaxy: A Technique for Two-Dimensional Thin-Film Definition", APL, No. 27(7), pp. 405-407, 10/75.

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