Masking technique usable in manufacturing semiconductor devices

Details Masking technique usable in manufacturing semiconductor devices Masking technique usable in manufacturing semiconductor devices

1977-11-29

1980-11-11

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29584, 357 91, B01J 1700

Patent

active

042324394

ABSTRACT:
A semiconductor layer different in material from a semiconductor substrate formed on at least one part of the surface of the substrate is partially removed in accordance with a planar configuration forming technique employing irradiation of a radiation such as light, electron beam or X-rays to form a residual layer and ion beams are applied to the upper surface or the substrate at an incidence angle less than 90 degrees so that a non-etching region is formed at the region of the substrate other than the region around and beneath said residual layer according to mutual relationships between the configuration of the residual layer and the incidence angle of the ion beams.

REFERENCES:
patent: 3258898 (1966-07-01), Garibotti
patent: 3914857 (1975-10-01), Goser
patent: 4086694 (1978-05-01), U

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